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1.2 MeV/amu Xe ion induced damage recovery in SiC

  • Published:2014-05 Issue: Volume:326 Page:337-340
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

O’Connell J.H.,Skuratov V.A.,Sohatsky A.S.,Neethling J.H.

Funder

Russian Foundation for Basic Research

National Research Foundation of South Africa

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effects of 167 MeV Xe26+ swift heavy ions irradiation on chemical vapour deposited silicon carbide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-09

2. Electron–phonon coupling factor and electron heat capacity of 6H-SiC;Molecular Simulation;2021-12-17

3. Coupled effects of electronic and nuclear energy deposition on damage accumulation in ion-irradiated SiC;Acta Materialia;2020-10

4. Defects in swift heavy ion irradiated n-4H-SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-12

5. Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC;Applied Surface Science;2019-11
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