Atomistic simulation of irradiation effects in GaN nanowires-Reference-Cited by-同舟云学术

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Atomistic simulation of irradiation effects in GaN nanowires

Published:2014-05 Issue: Volume:326 Page:15-18
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ren Wei,Kuronen Antti,Nordlund Kai

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference23 articles.

1. Semiconductor nanowires;Lu;J. Phys. D: Appl. Phys,2006

2. Semiconductor clusters, nanocrystals, and quantum dots;Alivisatos;Science,1996

3. A laser ablation method for the synthesis of crystalline semiconductor nanowires;Morales;Science,1998

4. High performance silicon nanowire field effect transistors;Cui;Nano Lett.,2003

5. Silicon vertically integrated nanowire field effect transistors;Goldberger;Nano Lett.,2006

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Incorporation of Europium into GaN Nanowires by Ion Implantation;The Journal of Physical Chemistry C;2019-04-02

2. High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures;Applied Surface Science;2014-10

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