Evidence of plastic flow and recrystallization phenomena in swift (∼100 MeV) Si7+ ion irradiated silicon-Reference-Cited by-同舟云学术

Evidence of plastic flow and recrystallization phenomena in swift (∼100 MeV) Si7+ ion irradiated silicon

Published:2004-08 Issue:3-4 Volume:222 Page:491-496
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Srivastava P.C,Ganesan V,Sinha O.P

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

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2. Proceedings of the Conference on Swift Heavy Ions in Materials Science – SHIMS, Vacuum, Vol. 48, 1997, p. 957

3. Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid‐phase crystallization: Theory, experiments, and thin‐film transistor applications

4. Viscoelastic Model for the Plastic Flow of Amorphous Solids under Energetic Ion Bombardment

5. Stress and plastic flow in silicon during amorphization by ion bombardment

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