RBS characterization of the deposition of very thin SiGe/SiO2 multilayers by LPCVD-Reference-Cited by-同舟云学术

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RBS characterization of the deposition of very thin SiGe/SiO2 multilayers by LPCVD

Published:2005-10 Issue:1-2 Volume:240 Page:395-399
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Muñoz-Martín A.,Climent-Font A.,Rodríguez A.,Sangrador J.,Rodríguez T.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

1. Photo- and electroluminescence from nanocrystalline silicon single and multilayer structures

2. Crystalline Si/SiO2 quantum wells

3. Si-rich/SiO2 nanostructured multilayers by reactive magnetron sputtering

4. Quantum confinement and recombination dynamics in silicon nanocrystals embedded in Si/SiO2 superlattices

5. Effect of Deposition Parameters on the Characteristics of Low-Pressure Chemical Vapor Deposited SiGe Films Grown from Si[sub 2]H[sub 6] and GeH[sub 4]

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RBS studies on coated micro-dimensional glass fibers used as micro-resonators;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08

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