Ion beam analysis of the dry thermal oxidation of thin polycrystalline SiGe films-Reference-Cited by-同舟云学术

Ion beam analysis of the dry thermal oxidation of thin polycrystalline SiGe films

Published:2005-10 Issue:1-2 Volume:240 Page:405-408
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kling A.,Soares J.C.,Prieto A.C.,Jiménez J.,Rodríguez A.,Sangrador J.,Rodríguez T.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2/Si0.75Ge0.25 using various H2 pressures

2. Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator

3. E.W.H. Kan, C.C. Leoy, W.K. Choi, W.K. Chim, D.A. Antoniadis, E.A. Fitzgerald, SMA-Singapore – MIT Alliance, AMMNS Technical Parallel Session Symposium 2003.

4. Effect of Deposition Parameters on the Characteristics of Low-Pressure Chemical Vapor Deposited SiGe Films Grown from Si[sub 2]H[sub 6] and GeH[sub 4]

5. The latest version of this program can be found at http://www.genplot.com.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Ge content and annealing conditions on the PL properties of nc-Si1−xGex embedded in SiO2 matrix in weak quantum confined regime;Journal of Luminescence;2014-11

2. IR laser CVD of nanostructured Si/Ge alloy from silane–germane mixture;Journal of Analytical and Applied Pyrolysis;2010-09

3. Single step synthesis of Ge–SiOx core-shell heterostructured nanowires;Journal of Materials Chemistry;2009

4. UV Raman spectroscopy of group IV nanocrystals embedded in a SiO2 matrix;Journal of Materials Science: Materials in Electronics;2007-06-23