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Electronic excitations induced climb of dislocations in swift heavy ion irradiated AlN and AlxGa1−xN

  • Published:2018-11 Issue: Volume:435 Page:116-120
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Sall M.,Moisy F.,Mattei J.G.,Grygiel C.,Balanzat E.,Monnet I.

Funder

ANR

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference33 articles.

1. The Blue Laser Diode: The Complete Story;Nakamura,2000

2. Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth;Morkoç,2008

3. Gallium nitride based transistors;Xing;J. Phys.: Condens. Matter,2001

4. Surface magnetism of Mg doped AlN: a first principle study;Chintalapati;J. Phys.: Condens. Matter,2014

5. Effects of Si doping in high-quality AlN grown by MOVPE on trench-patterned template;Nishio;J. Cryst. Growth,2013

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