The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. On the useful range of application of molecular dynamics simulations in the recoil interaction approximation
2. The Stopping and Range of Ions in Solids;Ziegler,1985
3. Computer simulation studies of low energy B implantation into amorphous and crystalline silicon
4. Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation
5. Repulsive interatomic potentials calculated using Hartree-Fock and density-functional theory methods
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3. Simulation of Rutherford backscattering spectrometry from arbitrary atom structures;Physical Review E;2016-10-25
4. Self-organized nanopatterning of silicon surfaces by ion beam sputtering;Materials Science and Engineering: R: Reports;2014-12
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