The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy-Reference-Cited by-同舟云学术

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The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy

Published:2019-03 Issue: Volume:442 Page:28-30
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Danga H.T.,Tunhuma S.M.,Auret F.D.,Igumbor E.,Omotoso E.,Meyer W.E.

Funder

National Research Foundation

University of Pretoria

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference23 articles.

1. On-line DLTS investigations of vacancy related defects in low-temperature electron irradiated, boron-doped Si;Zangenberg;Appl. Phys. A – Mater. Sci. Process.,2005

2. On-line DLTS investigations of the mono- and di-vacancy in p-type silicon after low temperature electron irradiation;Zangenberg;Nucl. Instrum. Methods Phys. Res. B,2002

3. Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors;Pintilie;Nucl. Instrum. Methods Phys. Res.,2009

4. Electronic and dynamical properties of the silicon trivacancy;Coutinho;Phys. Rev. B,2012

5. Schottky barriers on p-type silicon;Smith;Solid-State Electron.,1971

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium;Journal of Computational Electronics;2024-06-18

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