Author:
Van Ginhoven R.M.,Hjalmarson H.P.,Edwards A.H.,Tuttle B.R.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference26 articles.
1. Ionizing Radiation Effects in MOS Devices and Circuits,1989
2. The Physics of SiO2 and its Interfaces;Svensson,1979
3. The Physics and Chemistry of SiO2, and the Si–SiO2, Interface;Saks,1993
4. The Role of Hydrogen in SiO2 Films on Silicon
5. Dual behavior of H+ at Si–SiO2 interfaces: Mobility versus trapping
Cited by
17 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献