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Formation of SIMOX–SOI structure by high-temperature oxygen implantation

  • Published:2015-12 Issue: Volume:365 Page:137-140
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hoshino Yasushi,Kamikawa Tomohiro,Nakata Jyoji

Funder

Department of Mathematics and Physics, Kanagawa University

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Silicon-On-Insulator (SOI) Technology: Manufacture and Applications;Kononchuk,2014

2. Silicon on Insulator Technology: Materials to VLSI;Colinge,2004

3. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

4. S. Nakashima, PhD Thesis, Toyohashi Univ. Tech., 1993.

5. The Stopping and Range of Ions in Solids;Ziegler,1985

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