Author:
Al’zhanova A.,Dauletbekova A.,Komarov F.,Vlasukova L.,Yuvchenko V.,Akilbekov A.,Zdorovets M.
Funder
Grant of the Ministry of Education and Science of the Republic of Kazakhstan
Subject
Instrumentation,Nuclear and High Energy Physics
Reference15 articles.
1. Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability
2. Ion track formation in low temperature silicon dioxide
3. A new nanoporous material based on amorphous silicon dioxide
4. Threshold and criterion for ion track etching in SiO2 layers grown on Si
5. L. Vlasukova, F. Komarov, V. Yuvchenko, A. Dauletbekova, A. Akilbekov, Simulation of latent track parameters for SiO2 and Si3N4 irradiated with swift ions, in: Materials of 5th International Conference, Radiation Interaction with Materials: Fundamentals and Applications, Kaunas, 2014, pp. 230–234
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