Determination of recombination radius in Si for binary collision approximation codes

Author:

Vizkelethy Gyorgy,Foiles Stephen M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. Model of defect reactions and the influence of clustering in pulse-neutron-irradiated Si;Myers;J. Appl. Phys.,2008

2. Annealing of bombardment damage in a diamond-type lattice;Fletcher;Theor. Phys. Rev.,1953

3. The displacement of atoms in solids by radiation;Kinchin;Rep. Prog. Phys.,1955

4. Molecular-dynamics simulations of bulk displacement threshold energies in Si;Miller;Radiat. Eff. Defects Solids,1994

5. Threshold defect production in silicon determined by density functional theory molecular dynamics simulations;Holmström;Phys. Rev. B,2008

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