Molecular dynamics simulations of bulk displacement threshold energies in Si-Reference-Cited by-同舟云学术

Molecular dynamics simulations of bulk displacement threshold energies in Si

Published:1994-06 Issue:1-2 Volume:129 Page:127-131
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Miller Leann A.,Brice David K.,Prinja Anil K.,Picraux S. Thomas

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420159408228889

Reference8 articles.

1. Modeling solid-state chemistry: Interatomic potentials for multicomponent systems

2. Computer simulation of local order in condensed phases of silicon

3. Hemment, P. L. F. and Stevens, P. R. C. Radiation Effects in Semiconductors. Proceedings of the Santa Fe Conference on Radiation Effects in Semiconductors. pp.290

4. Watkins, G. D. Radiation Effects in Semiconductors. Proceedings of the Santa Fe Conference on Radiation Effects in Semiconductors. pp.67

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