Si nanocrystals formation by a new ion implantation device-Reference-Cited by-同舟云学术

Si nanocrystals formation by a new ion implantation device

Published:2008-05 Issue:10 Volume:266 Page:2486-2489
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Lorusso A.,Nassisi V.,Velardi L.,Congedo G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Laser-driven ion source for reduced-cost implantation of metal ions for strong reduction of dry friction and increased durability

2. Implantation of ions produced by the use of high power iodine laser

3. Energy spectra of Ag, Au, Sn, and Pb ions emitted from laser-created plasmas determined from their implantation depth profile in a metallic substrate

4. Production of low energy, high intensity metal ion beams by means of a laser ion source

5. Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient

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