Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
2. Zinc blende GaN grown by radio frequency plasma assisted molecular beam epitaxy
3. Multicolored light emitters on silicon substrates
4. Damage Due to Nitrogen Molecular Ions of GaN Heteroepitaxial Layers Grown on Si(001) Substrates by Molecular Beam Epitaxy Assisted by Electron Cyclotron Resonance
5. Growth of GaN layers on SiC/Si(111) substrate by molecular beam epitaxy
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1. First principle study on SimNm and SimNm±1 (m=2–10) clusters;Computational and Theoretical Chemistry;2013-08
2. Formation mechanisms of embedded nanocrystals in SiNx;Applied Physics Letters;2013-06-17
3. Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2011-06-20
4. Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2011-06-01
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