Annealing behavior of high temperature implanted Fe impurities in n-InP-Reference-Cited by-同舟云学术

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Annealing behavior of high temperature implanted Fe impurities in n-InP

Published:2004-02 Issue: Volume:216 Page:105-109
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Cesca T.,Gasparotto A.,Fraboni B.,Priolo F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Deep Centers in Semiconductors;Bishop,1986

2. High-resistance buried layers by MeV Fe implantation in n-type InP

3. High Fe2+/3+ trap concentration in heavily compensated implanted InP

4. T. Cesca, A. Gasparotto, F. Priolo, E.C. Moreira, B. Fraboni, G. Scamarcio, Ion Implantation Technology Conference Proceedings, Taos, New Mexico, in press

5. Materials Analysis by Ion Channeling;Feldman,1982

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of annealing temperature on magnetic properties of InFeP prepared by ion implantation;Surface and Coatings Technology;2013-08

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