Synthesis and characterization of compositionally graded Si1−xGex layers on Si substrate-Reference-Cited by-同舟云学术

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Synthesis and characterization of compositionally graded Si1−xGex layers on Si substrate

Published:2007-08 Issue:1-2 Volume:261 Page:723-726
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yu Z.Q.,Zhang Y.,Wang C.M.,Shutthanandan V.,Lyubinetsky I.V.,Engelhard M.H.,Saraf L.V.,McCready D.E.,Henager C.H.,Nachimuthu P.,Thevuthasan S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Characterization of strained Si/Si1−xGex/Si heterostructures annealed in oxygen or argon

2. High resolution channeling contrast microscopy and channeling analysis of SiGe quantum well structures

3. On the nature of cross‐hatch patterns on compositionally graded Si1−xGexalloy layers

4. Relaxed epitaxial Si1−xGex grown by MBE

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain Induced Nano-Structured Si1-XGeX Grown on Silicon by UHV-RTCVD for Photovoltaics;ECS Transactions;2011-10-04

2. Nanodot Formation in Thermally Annealed UHV-RTCVD Grown Si1-XGeX Epitaxial Layers on Silicon for Photovoltaics;MRS Proceedings;2011

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