First-principles investigation of site preference and bonding properties of neutral H in 3C

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First-principles investigation of site preference and bonding properties of neutral H in 3C–SiC

Published:2009-09 Issue:18 Volume:267 Page:3087-3089
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zhang Lei,Zhang Ying,Lu Guang-Hong

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. Heavy ion-induced damage in SiC Schottky barrier diode

2. The space radiation environment for electronics

3. Ab initiodensity-functional supercell calculations of hydrogen defects in cubic SiC

4. Playing with carbon and silicon at the nanoscale

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1. Distribution and electronic structure of interstitial hydrogen atoms in β-SiC: a First-Principles study;Radiation Effects and Defects in Solids;2023-01-05

2. Models and regressions to describe primary damage in silicon carbide;Scientific Reports;2020-06-26

3. Diffusion of hydrogen isotopes in 3C-SiC in HTR-PM: A first-principles study;Progress in Nuclear Energy;2020-01

4. Atomic-scale simulations of ideal strength and deformation mechanism in β-SiC under H/He irradiation;Ceramics International;2019-04

5. First-principles study of hydrogen retention and diffusion behaviors in 4H-SiC;Superlattices and Microstructures;2018-10

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