Defect production in neutron irradiated GaN-Reference-Cited by-同舟云学术

Defect production in neutron irradiated GaN

Published:2006-08 Issue:1-2 Volume:249 Page:358-361
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Marques J.G.,Lorenz K.,Franco N.,Alves E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Standard practice for characterizing neutron energy fluence spectra in terms of an equivalent monoenergetic neutron fluence for radiation-hardness testing of electronics, ASTM Standard E722-04, 2004.

2. Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN

3. Ion channeling and Raman scattering studies of the lattice disorder and residual strain in neutron irradiated GaN

4. Influence of ionizing radiation on the electrical behavior of a Be pebble bed

5. Computer simulation of channeling in single crystals

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