Patterned microstructures formed with MeV Au implantation in Si(100)-Reference-Cited by-同舟云学术

Patterned microstructures formed with MeV Au implantation in Si(100)

Published:2006-09 Issue:1-2 Volume:250 Page:76-80
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Rout Bibhudutta,Greco Richard R.,Zachry Daniel P.,Dymnikov Alexander D.,Glass Gary A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Buried dopant and defect layers for device structures with high-energy ion implantation

2. Proximity gettering with mega‐electron‐volt carbon and oxygen implantations

3. Lih J. Chen, John Poate, Tan-Fu Lei (Eds.), Ion Implantation Technology – Proceedings of the 15th International Conference on Ion Implantation Technology, Taipei, Taiwan, October 2004, Nucl, Instr. and Meth. B 237 (1–2) (2005).

4. Fundamentals of Microfabrication;Madou,1997

5. Bulk micromachining of silicon

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