Radiation effects on ohmic and Schottky contacts based on 4H and 6H-SiC
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference29 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Silicon carbide and silicon carbide-based structures
3. Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?
4. Contact formation in SiC devices
5. Improvement of high temperature stability of nickel contacts on n-type 6H–SiC
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1. Research status and progress of metal contacts of SiC power devices;Acta Physica Sinica;2021
2. Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts;Vacuum;2020-02
3. Effects of Neutron Irradiation on the Static and Switching Characteristics of High-Voltage 4H-SiC p-type Gate Turn-off Thyristors;IEEE Transactions on Electron Devices;2019-09
4. Study of frequency dependent characterization: applied gamma-ray irradiation on metal-polymer nanostructure;Journal of Radioanalytical and Nuclear Chemistry;2018-09-26
5. Property Change of Nickel-Silicon Carbide Schottky Contact with Neutron Fluence of 3.1 × 1010 n/cm2;Journal of Nanoscience and Nanotechnology;2016-12-01
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