Antisite defects in a chemical compound crystal caused by ion irradiation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference22 articles.
1. SiC Materials and Devices,1998
2. Tight-binding description for the bound electronic states of isolated single and paired native defects in β-SiC
3. Aggregation of carbon interstitials in silicon carbide: A theoretical study
4. Ab initiostudy of the migration of intrinsic defects in3C−SiC
5. Cascade overlap and amorphization in3C−SiC:Defect accumulation, topological features, and disordering
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