Strain-free Al0.08In0.018Ga0.902N/GaN heterostructure: Combined Rutherford backscattering/channeling and high resolution X-ray diffraction
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. InGaN-based violet laser diodes
2. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
3. Algorithms for the rapid simulation of Rutherford backscattering spectra
4. Energy bandgap and lattice constant contours of iii-v quaternary alloys of the form Ax By Cz D or ABx Cy Dz
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1. Fully Sputtered n–AlInGaN/p–Mg-InxGa1−xN (x ≤ 0.1) Heterojunction Diodes: Electrical Properties Over a Wide Temperature Range;Journal of Electronic Materials;2022-01-07
2. Tuning of the tetragonal distortion in AlInGaN thin films by different contents of Al and In;Superlattices and Microstructures;2014-09
3. Characterization of tetragonal distortion in a thick Al 0.2 Ga 0.8 N epilayer with an AlN interlayer by Rutherford backscattering/channeling;Chinese Physics B;2014-09
4. Determination of tetragonal distortion of Al0.69In0.09Ga0.22N/GaN heterostructure by RBS/C and HRXRD;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-06
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