Characterization of tetragonal distortion in a thick Al 0.2 Ga 0.8 N epilayer with an AlN interlayer by Rutherford backscattering/channeling
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/9/096801/pdf
Reference14 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE
3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
4. Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy
5. The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrostatic accelerator facilities and their applications at Peking University;Chinese Science Bulletin;2023-01-04
2. Structural characterization of Al 0.55 Ga 0.45 N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy;Chinese Physics B;2017-04
3. Chemical Composition Dependent Elastic Strain in AlGaN Epilayers;Chinese Physics Letters;2014-10
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