Formation of optically-active, metal silicides using ion implantation and/or oxidation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. The osmium-silicon phase diagram
2. Structural, electrical and optical characterization of semiconducting Ru2Si3
3. Polycrystalline Iridium Silicide Films. Phase Formation, Electrical and Optical Properties
4. Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: I . Theory
5. Dopant dependence of the oxidation rate of ion implanted silicon
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1. Selective Growth of Semiconducting Silicide Phase Based on the Growth Parameters;Silicon;2019-12-10
2. Jerome Lewis Duggan: A Nuclear Physicist and a Well-Known, Six-Decade Accelerator Application Conference (CAARI) Organizer;Reviews of Accelerator Science and Technology;2016-01
3. Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation;MRS Proceedings;2008
4. An investigation into the formation of Ru2Si3 nanocrystals in silica using ion implantation and thermal oxidation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-08
5. Formation of optically active osmium silicide in silica using ion implantation and thermal annealing;Journal of Non-Crystalline Solids;2006-07
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