Investigation of InAs/GaSb-based superlattices by diffraction methods
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Anisotropy and growth-sequence dependence of atomic-scale interface structure in InAs/Ga1−xInxSb superlattices
2. Recent advances in Ga1−xInxSb/InAs superlattice IR detector materials
3. Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications
4. MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection
5. Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mid-wavelength focal plane arrays infrared detector based on type-II InAs/GaSb superlattice;Optical and Quantum Electronics;2014-10-02
2. Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors;Journal of Applied Physics;2014-09-28
3. Quantification of atomic intermixing in short-period InAs/GaSb superlattices for infrared photodetectors;Journal of Applied Physics;2013-05-14
4. Atomic intermixing in short-period InAs/GaSb superlattices;Applied Physics Letters;2012-06-11
5. Influence of resonant Raman scattering in the elemental analysis using X-ray emission based techniques;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-08
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