Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4896834
Reference24 articles.
1. Proposal for strained type II superlattice infrared detectors
2. InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging
3. Material considerations for third generation infrared photon detectors
4. Interfacial roughness in InAs/GaSb superlattices
5. Visualizing Interfacial Structure at Non-Common-Atom Heterojunctions with Cross-Sectional Scanning Tunneling Microscopy
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1. Thermally Induced Metastability of InGAas Single-Layer for Highly Strained Superlattices by Metal Organic Chemical Vapor Deposition;SSRN Electronic Journal;2021
2. Strain-induced the dark current characteristics in InAs/GaSb type-II superlattice for mid-wave detector;Journal of Semiconductors;2020-06-01
3. Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron Microscopy: A Guide;Nanomaterials;2019-06-08
4. Atomic intermixing and segregation at the interface of InAs/GaSb type II superlattices;Superlattices and Microstructures;2017-04
5. Molecular beam epitaxy of interband cascade structures with InAs/GaSb superlattice absorbers for long-wavelength infrared detection;Semiconductor Science and Technology;2015-09-14
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