Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks-Reference-Cited by-同舟云学术

Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks

Published:2018-09 Issue: Volume:430 Page:59-63
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hu P.P.,Liu J.,Zhang S.X.,Maaz K.,Zeng J.,Zhai P.F.,Xu L.J.,Cao Y.R.,Duan J.L.,Li Z.Z.,Sun Y.M.,Ma X.H.

Funder

National Natural Science Foundation of China

CAS

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

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4. A.D. Koehler, M.J. Tadjer, T.J. Anderson, P. Chojecki, K.D. Hobart, F.J. Kub, Gallium Nitride and Silicon Carbide Power Technologies 6, 75 (2016) 99–105.

5. Nanocrystalline Diamond-Gated AlGaN/GaN HEMT

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