Carrier illumination measurement of dopant lateral diffusion

Author:

Budiarto E.,Segovia M.,Borden P.,Felch S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

1. B. Pawlak, R. Lindsay, R. Surdeanu, P. Stolk, K. Maex, X. Pages, in: Proceedings of 14th International Conference on Ion Implantation Technology (Taos, NM, 2002) IEEE, Piscataway, NJ 08854-4150, 2003, p. 21.

2. Ultrashallow junction formation by point defect engineering

3. S.B. Felch, D.F. Downey, E.A. Arevalo, S. Talwar, C. Gelatos, Y. Wang, in: Proceedings of 13th International Conference on Ion Implantation Technology (Alpbach, Austria, 2000), IEEE, Piscataway, NJ 08854-4150, 2000, p. 167.

4. E. Budiarto, P. Borden, E. Paton, E. Ng, G.J. Kluth, in: Proceedings of 7th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (Santa Cruz, CA, 2003) American Vacuum Society, New York, 2003, p. 314.

5. Patent pending.

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