Precise control of strain field for the selective formation of self-assembled InAs/GaAs quantum dots
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference14 articles.
1. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
2. Direct electronic transport through an ensemble of InAs self-assembled quantum dots
3. Lateral ordering of quantum dots by periodic subsurface stressors
4. Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs
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