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An X-band InGaP GaAs HBT MMIC oscillator

Published:2005-03 Issue:3 Volume:5 Page:249-253
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Kim Young Gi,Bae Jung Hyung,Park Cheol,Kim Chang Woo,Kim Sung-Il,Min Byoung-Gue,Lee Jong-Min,Kim Hong Ju,Lee Kyung Ho

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference16 articles.

1. Gas source molecular beam epitaxy of InP-based heterostructures for OEIC applications;Chen;Curr. Appl. Phys,2001

2. A low phase noise X-band MMIC GaAs MESFET VCO

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X -Band Harmonic-Tuned High Power and Efficiency GaN HEMT Oscillator IC;IEEE Access;2024

2. Impact of base bias current and incident optical power on the InP/InGaAs heterojunction phototransistor performances;Optical Materials;2022-01

3. Local mismatch and noise investigation for pre and post multilayer pHEMTs;Current Applied Physics;2020-12

4. Al_0.2Ga_0.3In_0.5P/Al_0.1Ga_0.4In_0.5P/InGaP/GaAs Triple Heterostructure-Emitter Bipolar Transistor;Science of Advanced Materials;2016-02-01

5. Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base-collector junction;Semiconductors;2013-10

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