1. Silicides and alternative technologies for future ICs (Part 1);Kittl;Solid State Technol,1999
2. Silicides and alternative technologies for future ICs (Part 2);Kittl;Solid State Technol,1999
3. Advanced salicides for 0.10 μm CMOS: Co salicide processes with low leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi2;Kittl;Thin Solid Film,1998
4. A new leakage mechanism of Co salicide and optimized process conditions;Goto;IEEE Trans Electron Devices,1999
5. Ru GP, Liu J, Qu XP, Li BZ, Detavernier C, Van Meirhaeghe RL, Cardon F. An atomic force microscopy study of thin CoSi2 films formed by solid state reaction. In: IEEE (Electron Devices Society and Beijing Sector) Staff, editors. Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology. PR China: Institute of Electrical and Electronic Engineers Beijing, 1998, pp. 328–31.