Effect of uniaxial stress on InSbtunnel junctions
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference21 articles.
1. Direct Observation of Polarons and Phonons During Tunneling in Group 3-5 Semiconductor Junctions
2. Band Structure Parameters Deduced from Tunneling Experiments
3. Anisotropic Stress Effect on the Excess Current in Tunnel Diodes
4. Pressure Dependence of the Current-Voltage Characteristics of Esaki Diodes
5. Effect of Elastic Strain on Interband Tunneling in Sb-Doped Germanium
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain-electrical phenomena in gallium arsenide structures;Soviet Physics Journal;1980-01
2. Determination of the conduction-band structure of InSb subject to mechanical strain from measurements of the reflectivity spectrum;Physical Review B;1978-12-15
3. Piezotunnel current in GaAs p-n junctions;Soviet Physics Journal;1977-03
4. Excess mechanical stress induced in mesa p-n junctions by hydrostatic pressure;Soviet Physics Journal;1976-04
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