Surface and bulk properties of CuGaSe2 thin films-Reference-Cited by-同舟云学术

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Surface and bulk properties of CuGaSe2 thin films

Published:2003-09 Issue:9-10 Volume:64 Page:1553-1557
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Meeder A.,Weinhardt L.,Stresing R.,Fuertes Marrón D.,Würz R.,Babu S.M.,Schedel-Niedrig T.,Lux-Steiner M.Ch.,Heske C.,Umbach E.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference21 articles.

1. Wide gap chalcopyrites: material properties and solar cells

2. Electronic properties of CuGaSe2-based heterojunction solar cells. Part II. Defect spectroscopy

3. Radiative recombination via intrinsic defects in CuxGaySe2

4. Electronically active defects in CuGaSe 2 -based heterojunction solar cells

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3. Determination of the Gibbs Formation Energy of CuGaSe2 by EMF Method;International Journal of Electrochemical Science;2020-09

4. Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics;ACS Applied Materials & Interfaces;2019-07-05

5. Preparation of n-type Copper Gallium Selenide thin films by tin doping and analysis of its structural, electrical, optical and transport properties;Materials Chemistry and Physics;2018-08

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