Effect of uniaxial stress on energy loss and scattering mechanism in p-type silicon
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference18 articles.
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4. Energie-Relaxation warmer Ladungsträger in Germanium und Silizium
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Full-Boltzmann-equation solutions of the acoustic-phonon-limited conductivity and Hall mobilities forp-type silicon and germanium;Physical Review B;1983-05-15
2. High pressure measurements on AlxGa1−xAs‐GaAs (x= 0.5 and 1) superlattices and quantum well heterostructure lasers;Journal of Applied Physics;1982-09
3. MICROWAVE EXPERIMENTS INCLUDING AVALANCHE;Le Journal de Physique Colloques;1981-10
4. Nonlinear piezoresistance in p-type silicon;Soviet Physics Journal;1980-10
5. Energy and momentum relaxation of charge carriers in Ge and Si under uniaxial stress;Journal of Physics and Chemistry of Solids;1978-01
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