Minority carrier lifetimes in Cz-Si wafers with intentional V-I transitions
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Elsevier BV
Reference31 articles.
1. Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon;Voronkov;J Cryst Growth,1999
2. The mechanism of swirl defects formation in silicon;Voronkov;J Cryst Growth,1982
3. On the properties of the intrinsic point defects in silicon: A perspective from crystal growth and wafer processing;Falster;Phys Status Solidi B-Basic Res,2000
4. Vacancy-type microdefect formation in Czochralski silicon;Voronkov;J Cryst Growth,1998
5. Grown-in defects in silicon produced by agglomeration of vacancies and self-interstitial;Voronkov;J Cryst Growth,2008
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