Author:
Meier J.,Kroll U.,Benagli S.,Fesquet L.,Steinhauser J.,Borello D.,Orhan J.-B.,Djeridane Y.,Vallat-Sauvain E.,Fecioru-Morariu M.,Mereu B.,Kalas J.,Hoetzel J.,Losio P.,Kupich M.,Kluth O.,Eisenhammer T.,Weidman D.,Marjanovic S.,Kohnke G.
Reference25 articles.
1. High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency;Curtins;Electronics Lett.,1987
2. Influence of plasma excitation frequency for a-Si:H thin film deposition;Curtins;Plasma Chemistry and Plasma Proc.,1987
3. Complete microcrystalline p-i-n solar cell - crystalline or amorphous cell behaviour?;Meier;Appl. Phys. Lett.,1994
4. Intrinsic microcrystalline silicon (μc-Si:H) - a promising new thin film solar cell material;Meier;Proc. 1st World Conf. on PV Energy Conversion, Waikoloa, Hawaii, USA,1994
5. Faÿ S. L’oxyde de zinc par depot chimique en phase vapeur comme contact électrique transparent et diffuseur de lumière pour les cellules solaires [EPFL thesis]; 2003.
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献