High Efficiency Fully Implanted and Co-annealed Bifacial N-type Solar Cells

Author:

Lanterne Adeline,Gall Samuel,Veschetti Yannick,Cabal Raphaël,Coig Marianne,Milési Frédéric,Tauzin Aurélie

Publisher

Elsevier BV

Reference11 articles.

1. K. Bothe and J. Schmidt. Electronically activated boron-oxygen-related recombination centers in crystalline silicon. Journal of Applied Physics, 2006; 99, 013701.

2. B. Sopori, P. Basnyat, S. Devayajanam, S. Shet, V. Mehta, J. Binns et al. Understanding Light-Induced Degradation of c-Si Solar Cells. Proc. 38th IEEE PVSC. 2010, p. 1115-1120.

3. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon;Macdonald;Appl. Phys. Lett.,2004

4. A.R. Burgers, L.J. Geerligs, A.J. Carr, A. Gutjahr, D.S. Saynova, X. Jingfeng et al., 19,5% efficient n-type Si solar cells made in production. Proc. 26th EuPVSEC and Exhibition, 2011, p. 1144-1147.

5. High quality ion implanted boron emitters in an interdigitated back contact solar cell with 20% efficiency

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