Author:
Black Lachlan E.,Allen Thomas,McIntosh Keith R.,Cuévas Andres
Reference24 articles.
1. A. Richter, S.W. Glunz, F. Werner, J. Schmidt, and A. Cuevas, “Improved quantitative description of Auger recombination in crystalline silicon”, Physical Review B 86, 165202 (2012).
2. Excellent silicon surface passivation with 5 Å thin ALD Al2O3 layers: Influence of different thermal post-deposition treatments;Richter;Physica Status Solidi RRL,2011
3. On the blistering of atomic layer deposited Al2O3 as Si surface passivation;Vermang;Proceedings of the 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington USA,2011
4. Role of annealing conditions on surface passivation properties of ALD Al2O3 films;Kersten;Energy Procedia,2013
5. Effective SiNx:H capping layers on 1-nm Al2O3 for p+ surface passivation;Liang;IEEE Journal of Photovoltaics,2014
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