Etching of a-Si:H on c-Si absorber monitored by in situ photoluminescence measurements
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1. In Situ PL and SPV Monitored Charge Carrier Injection During Metal Assisted Etching of Intrinsic a-Si Layers on c-Si;ACS Applied Materials & Interfaces;2015-05-22
2. Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments;Applied Physics Letters;2013-06-10
3. Strongly Reduced Si Surface Recombination by Charge Injection during Etching in Diluted HF/HNO3;ChemPhysChem;2012-07-03
4. Progress in Point Contacted Rear Silicon Heterojunction Solar Cells;Energy Procedia;2012
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