Author:
Bordihn Stefan,Engelhart Peter,Mertens Verena,Kesser Gerd,Köhn Dennis,Dingemans Gijs,Mandoc Magda M.,Müller Jörg W.,Kessels W.M.M.
Reference12 articles.
1. R. Hezel and K. Jaeger, Low-Temperature Surface Passivation of Si for Solar Cells, J. Electrochem. Soc. 136, 518; 1989.
2. B. Hoex, S.B.S. Heil, E. Langreis, M.C.M. van de Sanden, W.M.M. Kessels, Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3, Appl. Phys. Lett., 89, 042112; 2006.
3. G. Agostinellia, A. Delabiea, P. Vitanovb, Z. Alexievab, H.F.W. Dekkersa, S. De Wolfa, G. Beaucarnea, Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge, Solar Energy Materials & Solar Cells 90;2006.
4. N.E. Grant, K.R. McIntosh, Surface passivation attained by silicon dioxide grown at low temperature in nitric acid, 24th EUPVSEC, Hamburg, Germany; 2009.
5. E. Pincik, H. Kobayashi, J. Rusnak, W.B. Kim, R. Brunner, L. Malinovsky, T. Matsumoto, K. Imamura, M. Jergel, M. Takahashi, Y. Higashi, M. Kucera, M. Mikkula, On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process, Applied Surface Science 256; 2010.
Cited by
33 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献