Passivation of silicon wafers by Silicon Carbide (SiCx) thin film grown by sputtering

Author:

Kaminski P.M.,Abbas A.,Bass K.,Claudio G.

Publisher

Elsevier BV

Reference15 articles.

1. A. Abrele, Surface passivation of Crystalline Silicon Solar Cells: A review, Progress in Photovoltaics: Research and Applications, 1999, 8: 362-376.

2. Overview on SiN surface passivation of crystalline silicon solar cells;Aberle;Solar Energy Materials and Solar Cells,2001

3. Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride;Schmidt;Solar Energy Materials and Solar Cells,2001

4. Record low surface recombination velocities on 1Ω cm p-silicon using remote plasma silicon nitride passivation;Lauinger;Applied Physics A: Materials Science & Processing,1996

5. M. Ruske, J. Liu, S. Wieder, R. Preu, and W. Wolke, A Large area production technology for solar cells - sputter deposition of SiN:H, 20th European Photovoltaic Solar Energy Conference, 2005, 1470-1473.

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