Deep levels in semiconductors-Reference-Cited by-同舟云学术

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Deep levels in semiconductors

Published:1983-03 Issue: Volume:117-118 Page:9-15
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Watkins George D.

Publisher

Elsevier BV

Subject

General Engineering

Reference32 articles.

1. Theory of interstitial transition-metal impurities in silicon

2. Many-electron effects for interstitial transition-metal impurities in silicon

Cited by 142 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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