Physical properties of the deep X electron trap responsible for long time persistent photocapacitance in CdS
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference14 articles.
1. International Conf. on II–VI compounds;Housin,1982
2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
3. A lattice attenuation in CdS measured by the ultrasonic injection method
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of nonradiative traps by hot electron–hole plasma luminescence dynamics in polar semiconductors;Applied Physics Letters;1998-01-12
2. A new technique to decompose closely spaced interface and bulk trap states using temperature dependent pulse‐width deep level transient spectroscopy method: An application to PT/CdS photodetector;Journal of Applied Physics;1993-01-15
3. Lattice coupling strength of electron-induced-irradiated defects in InP;Solid State Communications;1986-02
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