Optical studies of shallow impurities in semiconductor quantum well structures-Reference-Cited by-同舟云学术

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Optical studies of shallow impurities in semiconductor quantum well structures

Published:1987-09 Issue:1-2 Volume:146 Page:112-120
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Delalande C.

Publisher

Elsevier BV

Subject

General Engineering

Reference35 articles.

1. Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures

2. Low-temperature exciton trapping on interface defects in semiconductor quantum wells

3. Hydrogenic impurity states in a quantum well: A simple model

4. Extrinsic layer at AlxGa1−xAs‐GaAs interfaces

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Infrared‐absorption spectra associated to transitions from donor states to conduction subbands in GaAs‐(Ga,Al)As quantum wells;Journal of Applied Physics;1996-07-15

2. Intradonor absorption spectra under external fields in quantum wells;Physical Review B;1996-04-15

3. Screening effect on polarizabilities of shallow donors and acceptors in finite-barrier quantum wells;physica status solidi (b);1996-01-01

4. Donor 1s-2p±transitions in doped GaAs-Ga1−xAlxAs quantum wells: Effects of electric and magnetic fields;Physical Review B;1995-01-15

5. Binding energies and intra-donor absorption spectra in GaAs-GaAlAs quantum wells;Semiconductor Science and Technology;1995-01-01

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