Infrared‐absorption spectra associated to transitions from donor states to conduction subbands in GaAs‐(Ga,Al)As quantum wells-Reference-Cited by-同舟云学术

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Infrared‐absorption spectra associated to transitions from donor states to conduction subbands in GaAs‐(Ga,Al)As quantum wells

Published:1996-07-15 Issue:2 Volume:80 Page:1142-1145
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Sabin del Valle J.¹,de Dios‐Leyva M.²,Oliveira L. E.¹

Affiliation:

1. Instituto de Física, Universidade Estadual de Campinas—Unicamp, Caixa Postal 6165, Campinas, São Paulo, 13083‐970, Brazil

2. Departamento de Física Teórica, Universidad de La Habana, San Lázaro y L, Vedado, Havana, Cuba

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference30 articles.

1. L. Esaki, in Recent Topics in Semiconductor Physics, edited by H. Kamimura and Y. Toyozawa (World Scientific, Singapore, 1983), p. 1.

2. J. P. van der Ziel, R. Dingle, R. C. Miller, W. Wiegmann, and W. A. Nordland, Jr., Appl. Phys. Lett. 26, 463 (1975).APPLAB0003-6951

3. R. Dingle, H. L. Stormer, A. C. Gossard, and W. Wiegmann, Appl. Phys. Lett. 33, 665 (1978).APPLAB0003-6951

4. J. N. Schulman and T. C. McGill, Appl. Phys. Lett. 34, 663 (1979).APPLAB0003-6951

5. G. Bastard, Phys. Rev. B 24, 4714 (1981).PRBMDO0163-1829

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