Properties of the 78 meV acceptor in GaAs
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference27 articles.
1. Photoluminescence of Silicon‐Compensated Gallium Arsenide
2. Luminescence in Silicon‐Doped GaAs Grown by Liquid‐Phase Epitaxy
3. Photoluminescence identification of ∼77‐meV deep acceptor in GaAs
4. Evidence of intrinsic double acceptor in GaAs
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3. Electrical isolation of n-type GaAs layers by proton bombardment: Effects of the irradiation temperature;Journal of Applied Physics;1998-11
4. Thermal stability of the electrical isolation inn-type gallium arsenide layers irradiated with H, He, and B ions;Journal of Applied Physics;1997-01-15
5. Acceptor ionization energies in gallium nitride: chemical trends and electronegativities;Semiconductor Science and Technology;1996-05-01
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