The observation of deep donor levels in epitaxially regrown implanted silicon-Reference-Cited by-同舟云学术

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The observation of deep donor levels in epitaxially regrown implanted silicon

Published:1985-03 Issue:1-3 Volume:129 Page:166-170
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Brotherton S.D.,Bradley P.,Gill A.

Publisher

Elsevier BV

Subject

General Engineering

Reference14 articles.

1. Inst. Phys. Conf. Ser.;Shannon,1984

2. Ion Implantation in Semiconductors and other Materials;Crowder,1973

3. J.M. Shannon. Unpublished.

4. Inst. Phys. Conf. Ser.;Shannon,1976

5. Donor generation in monocrystalline silicon by halogen implantation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique;Semiconductor Science and Technology;1994-09-01

2. Comparison of electrical defects in Ge+and Si+preamorphized BF2‐implanted silicon;Journal of Applied Physics;1987-11

3. Defects and leakage currents in BF2‐implanted preamorphized silicon;Journal of Applied Physics;1986-11-15

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