Discrete and integrated MOS power technologies-Reference-Cited by-同舟云学术

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Discrete and integrated MOS power technologies

Published:1985-03 Issue:1-3 Volume:129 Page:33-52
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Rossel Pierre,Buxo Jean

Publisher

Elsevier BV

Subject

General Engineering

Reference112 articles.

1. Transistors, Field Effect, H.F. Silicon, Power, Linear, 10 Megahertz, 5 Watt-PEP;Dawson;Research and Development Technical Report ECOM 02117 F,1968

2. Device Design of an Ion Implanted High Voltage MOSFET;Yoshida,1974

3. Power MOSFET's for medium-wave and short-wave transmitters

4. A complementary pair of High-Power MOSFET's;Okabe,1977

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental characterization of power VDMOS transistors in commutation and a derived model for computer-aided design;IEEE Transactions on Power Electronics;1989-07

2. Smart power and high voltage integrated circuits and related MOS technologies;Microelectronics Journal;1989-01

3. Electron-beam test on power semiconductor devices;Scanning;1988

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