Loss of dimensionality, localisation and conductance oscillations in N-type GaAs FET's
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference12 articles.
1. Magneto-resistance oscillations and the transition from three-dimensional to two-dimensional conduction in a gallium arsenide field effect transistor at low temperatures
2. The metal-insulator transition in the impurity band of n-type GaAs induced by a magnetic field and loss of dimension
3. Poole DA and Pepper M, 1982b, J. Phys. C, to be published
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